La doped PZT films for gigabit DRAM technology

摘要

Very low leakage current density (5/spl times/10/sup -7/ A/cm/sup 2/ even at 125/spl deg/C) and high charge storage density (100 fCspl mu/m/sup 2/) under V/sub DD2=1 V conditions have been achieved using 5% La doped PZT films for gigabit DRAM capacitor dielectrics. In addition, the fatigue and TDDB measurements indicate good reliability of this capacitor.