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Measurement of slow crack growth in silicon and nickel mechanical devices

机译:硅和镍机械设备中缓慢裂纹扩展的测量

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The design, modeling, and experimental tests results of both a single-crystal silicon and a polycrystalline nickel micromechanical device developed to evaluate fracture and fatigue of very small fractures are described. The devices are cantilever beams, approximately 300- mu m long. Electrodes excite the devices at resonance. Fatigue crack propagation or time dependent structural change is measured by detecting the shift in resonant frequency. In the silicon device, the frequency change is caused by the extension of a preexisting crack introduced near the fixed end of the cantilever. Experimental data are presented demonstrating time-dependent crack growth in silicon. This study indicates the possibility of crack growth in silicon structures, given the correct environment. Given the greater dislocation mobilities in metals and additional failure modes available in polysilicon, long-term crack growth should be included as a design consideration in the design of micromechanical structures.
机译:描述了开发用于评估非常小的断裂的断裂和疲劳的单晶硅和多晶镍微机械装置的设计,建模和实验测试结果。这些设备是大约300微米长的悬臂梁。电极在谐振时激发设备。通过检测共振频率的变化来测量疲劳裂纹的扩展或与时间有关的结构变化。在硅器件中,频率变化是由在悬臂的固定端附近引入的先前存在的裂纹的扩展引起的。给出了实验数据,证明了硅中随时间变化的裂纹扩展。这项研究表明,在正确的环境下,硅结构中裂纹扩展的可能性。考虑到金属中较大的位错迁移率和多晶硅中可用的其他失效模式,在微机械结构的设计中应考虑将长期裂纹扩展作为设计考虑因素。

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