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Measurement of microwave properties of X-band accelerating structure under pulsed high-power operation at liquid nitrogen temperature

机译:液氮温度下脉冲大功率工作下X波段加速结构微波性能的测量

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After required chemical treatments a disk-loading structure was operated at liquid nitrogen temperature with X-band magnetron as an RF source. The peak RF pulse power was variable from 150 to 300 KW and the average power was altered by changing the pulse repetition rate between 1400 and 2800 pps. Measurements on this structure both at low and at high power indicated the Q factor of 6800 at room temperature,which increased to 17000. At liquid nitrogen temperature-an enhancement factor greater then 2,5 in good agreement with theory.
机译:经过必要的化学处理后,在液氮温度下使用X波段磁控管作为RF源操作磁盘加载结构。峰值RF脉冲功率在150到300 KW之间变化,平均功率通过在1400到2800 pps之间改变脉冲重复频率来改变。在低功率和高功率下对该结构的测量表明,室温下的Q因子为6800,增加到17000。在液氮温度下,增强因子大于2,5,与理论吻合良好。

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