Analysis of power switching devices and power electronics circuits using two-dimensional device models

摘要

Two-dimensional device model based simulation of power MOSFETs and of power electronics circuits are presented. In order to develop MOSFETs with lower on-resistance at the low temperature region around 80 K device characteristics of a MOSFET for various temperature were examined. Simulated drain characteristics showed good agreement with experimental results. Circuit simulation using two-dimensional device models needs more computation time and memories than the simulation using equivalent circuit models for switching devices such as SPICE type device models.