Amorphization of bulk and thin film PLZT materials by 1.5 MeV krypton ion irradiation with in situ TEM observation

摘要

Transmission electron microscopy (TEM) samples prepared from both bulk and thin-film PLZT (lanthanum-modified lead zirconate titanate) materials have been irradiated with 1.5-MeV krypton ions at various temperatures. At room temperature, a PLZT 9/65/35 ceramic samples was found to be come completely amorphized after a dose of 2 approximately *10/sup 14/ ions/cm/sup 2/, much less than the critical amorphization dose for silicon. The sputter-deposited, fine-grained PLZT thin film took even a smaller dose to become amorphous. However, at 450 degrees C, the upper temperature limit for the material to retain its desirable physical properties, the PLZT 9/65/35 was not amorphized even after a dose of 1.1*10/sup 15/ ions/cm/sup 2/. PLZT is sensitive to ion-irradiation-induced amorphization because of its high nuclear stopping power and complex crystal structure.