An inverted-growth approach to development of an IR-transparent, high-efficiency AlGaAs/GaAs cascade solar cell

摘要

An approach for inverted-grown AlGaAs/GaAs cascade cells, where the AlGaAs top cell is grown first at high temperatures, placing the surface to be illuminated nearest to the substrate, is presented. Following the growth of the top cell, the GaAs tunnel interconnect and the bottom cell are grown at lower temperatures. After the inverted growth, the AlGaAs/GaAs cascade structure is selectively removed from the parent substrate, Ge in this case. Advantages of the inverted-growth approach are discussed.