A novel circular structure for the extraction of the contact resistivity-application to the Pd/sub 2/Si/sup +/Si, TiN/Ti/sup +/Si and TiN/Ti/p/sup +/Si interfaces

摘要

A structure, named the circular resistor (CR), is proposed for extracting metal-semiconductor contact resistivity. Its particular geometry allows it to fit the actual geometry of VLSI contacts. An analytical form for the contact resistance is shown as a function of the contact parameters. The Pd/sub 2/Si/sup +/Si, TiN/Ti/sup +/Si, and TiN/Ti/p/sup +/Si interfaces are investigated by means of CRs of various dimensions, and a single value of contact resistivity is extracted for each interface.