Microstructural evolution of oxides during processing of oxygen implanted SOI material

摘要

Silicon-on-insulator (SOI) material fabrication by oxygen implantation (SIMOX) is addressed. Formation and growth of the buried oxide, formation and evolution of oxygen bubbles in the top silicon layer, and precipitate evolution and elimination during ramping and annealing are considered. Recent work is summarized on the effects of processing conditions on oxide evolution. Specifically, effects of implantation conditions on buried oxide formation, effects of ramping conditions on oxygen bubble evolution and defect formation, and effects of annealing conditions on the structure of the buried oxide and its interfaces are discussed.