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1.3-/spl mu/m GalnAsP Near Traveling-wave Laser Amplifiers Made By The Combination Of Angled Facets And Antireflection Coatings

机译：1.3- / spl mu / m GalnAsP近角行波激光放大器，由成角度的小面和增透膜组成

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《》|1988年|P.127-129|共3页
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Zah; C.E.; Caneau; C.;
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中图分类无线电电子学、电信技术;
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专利

1. 1.3 mu m GaInAsP near-travelling-wave laser amplifiers made by combination of angled facets and antireflection coatings [J] . Zah C.E., Caneau C. Electronics Letters . 1988,第20期

机译：1.3μmGaInAsP近行波激光放大器，由成角度的小面和抗反射涂层组成
2. Analysis of antireflection coatings on angled facet semiconductor laser amplifiers [J] . Farries M.C., Buus J. Electronics Letters . 1990,第6期

机译：斜面半导体激光放大器的抗反射涂层分析
3. 1.5 mu m GaInAsP angled-facet flared-waveguide traveling-wave laser amplifiers [J] . Zah C.E., Bhat R. IEEE Photonics Technology Letters . 1990,第1期

机译：1.5μm GaInAsP斜面喇叭形波导行波激光放大器
4. 1.3-/spl mu/m GalnAsP Near Traveling-wave Laser Amplifiers Made By The Combination Of Angled Facets And Antireflection Coatings [C] . Zah C.E., Caneau C., Institute of Electric and Electronic Engineer Conference on Lasers and Electro-Optics Society Annual Meeting . 1988

机译：1.3- / SPL MU / M GALNASP在旅行波激光放大器附近，由成角度的刻面和抗反射涂层组合制成
5. Real-time in situ ellipsometry for the controlled deposition of anti-reflection coatings on semiconductor laser facets. [D] . Wu, I-Fan. 1993

机译：实时原位椭偏仪可控制减反射膜在半导体激光面上的沉积。
6. Stable Single-Mode Operation of Distributed Feedback Quantum Cascade Laser by Optimized Reflectivity Facet Coatings [O] . Dong-Bo Wang, Jin-Chuan Zhang, Feng-Min Cheng, 2018

机译：优化反射率刻面涂层的分布式反馈量子级联激光器的稳定单模工作
7. High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currentsud [O] . Liu H.Y., Childs D.T., Badcock T.J., 2005

机译：高性能三层1.3- / spl mu / m Inas-Gaas量子点激光器，具有极低的连续波室温阈值电流 ud

1.3-/spl mu/m GalnAsP Near Traveling-wave Laser Amplifiers Made By The Combination Of Angled Facets And Antireflection Coatings

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