1.3 mu m GaInAsP near-travelling-wave laser amplifiers made by combination of angled facets and antireflection coatings

摘要

1.3 mu m GaInAsP near-travelling-wave laser amplifiers have been realised by the combination of angled facets and antireflection coatings. Without in situ monitoring on the device itself during dielectric coatings, one can routinely obtain a low effective modal facet reflectivity of 5-8*10/sup -4/. The devices had an internal gain of 24+or-1.5 dB for the TE mode and a single-mode fibre coupling loss of 5 dB/facet.