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X-ray photoelectron spectroscopy, depth profiling, and elemental imaging of metal/polyimide interfaces of high density interconnecct packages subjected to temperature and humidity

机译:X射线光电子能谱,深度剖析和受温度和湿度影响的高密度互连封装的金属/聚酰亚胺界面的元素成像

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X-ray photoelectron spectroscopy was used to analyze surfaces adn buried interfaces of a tape ball grid array interconnect packate that was exposed to temperature and humidity lesting. Two metallization structures, employing 3.5 and 7.5nm Cr adhesion layers, respectively, showed dramatically different results in the PCT. For the metallization with 3.5nm Cr, spontaneous failre occurred on the polymer side of jthe metal/polyimide inerface. Copper and other metals were detected by XPS on and below this polymer surface. For the metallization with 7.5nm Cr, which did not delaminate in the PCT, the metallization was manually peeled away and also showed failure at the polymer side of the interface. Conventional XPS taken from a 1 mm diameter area showed the presence of metals on and below this polymer surface. Detailed spatially-resolved analysis using small area XPS and imaging XPS showed that this metal did not migrate through and below the metal/poly mer interface, but around and outside of jthe metallized area.
机译:X射线光电子能谱用于分析暴露于温度和湿度的带状球栅阵列互连组件的表面和掩埋界面。分别采用3.5和7.5nm Cr粘附层的两种金属化结构在PCT中显示出截然不同的结果。对于用3.5nm Cr进行金属化,在金属/聚酰亚胺表面的聚合物侧发生自发失效。通过XPS在该聚合物表面上和下面检测到铜和其他金属。对于7.5nm Cr的金属镀层(在PCT中未分层),手动将金属镀层剥离,并且在界面的聚合物侧也显示出故障。从直径为1毫米的区域获取的常规XPS显示,在该聚合物表面上和下方存在金属。使用小面积XPS进行的详细的空间分辨分析和XPS成像表明,这种金属不会迁移通过金属/聚合物界面及其下方,而会迁移到金属化区域的周围和外部。

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