Cell-shifting compaction of building-cell methodology forhigh-speed GaAs standard-cell LSIs

摘要

The authors propose a novel cell-shifting compaction concept fornbuilding-cell methodology to realize high-speed GaAs standard-cell LSIs.nThis compaction reduces the layout-area and stray capacitance and theninductance of routings, and leads to a large degree of freedom for cellnplacement. The cell-shifting compaction is also a valid approach for Sinstandard-cell LSIs