Department of Electronic and Computer Engineering and Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;
Department of Electronic and Computer Engineering and Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;
Department of Electronic and Computer Engineering and Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;
Department of Photonics and the Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Photonics and the Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Photonics and the Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Department of Photonics and the Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan;
Resonant-cavity light-emitting diode; RCLED;
机译:半极性GaN模板上的毫瓦功率蓝色InGaN / GaN发光二极管
机译:激光二极管具有功率包装:单模激光二极管的前景一片光明,既可以提供高达100毫瓦的单个电源,又可以提供高达半瓦的阵列电源
机译:具有导电纳米多孔分布布拉格反射器的谐振腔蓝紫色发光二极管
机译:蓝色谐振腔发光二极管,半毫瓦输出功率
机译:基于高功率,低下垂III族氮化物的蓝色发光二极管。
机译:准对准金纳米粒子增强了蓝色发光二极管的光输出功率
机译:GaN谐振腔发光二极管电力波动的起源