Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, Republic of China;
rnDepartment of Electrical Engineering, Wu Feng Institute of Technology, Chiayi 621, Taiwan, Republic of China;
rnDepartment of Electrical Engineering, Wu Feng Institute of Technology, Chiayi 621, Taiwan, Republic of China;
rnInstitute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, Republic of China;
rnInstitute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, Republic of China;
rnInstitute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, Republ;
surface roughness; KrF excimer laser; laser lift-off; GaN LEDs; Gallium nitride; etching;
机译:使用F_2和KrF准分子激光器通过多波长激发工艺对外延氮化镓膜进行深蚀刻
机译:使用KrF准分子激光处理的独立式单晶硅微结构的表面粗糙度改性,以改善机械性能
机译:常规酸蚀与掺铬,掺铬的搪瓷表面粗糙度和剪切结合强度的比较:钇scan镓镓石榴石激光腐蚀–体外研究
机译:通过KRF准分子激光蚀刻形成的氮化镓与氮化镓的表面粗糙度
机译:使用光电化学蚀刻技术开发和制造基于氮化镓的微盘激光器。
机译:用KrF准分子激光辐照在掺杂的聚甲基丙烯酸甲酯薄膜上制备周期性表面结构
机译:KrF受激准分子激光辐照引起的氧化铟锡表面粗糙度和功函数的变化