Luminescence from Si-Si_1-xGe_x/Si_1-yC_y-Si structures

摘要

Near band edge photoluminescence has been obtained from Si_1-yC_y quantum well (QW) and neighboring Si_1-xGe_x/Si_1-yC_y double QW (DQW) structures. Enhanced no-phonon recombination is observed from the DQW structures and it is attributed to a breaking of the k-selection rule in the presence of the heterointerface. The luminescence persists for measurement temperatures up to 30-50 K and the intensity exhibits a quenching behavior with an activation energy equal t 8-20 meV. In electroluminescence only recombination in the Si_1-xGe_x layer has been observed from neighboring Si_1-xGe_x and Si_1-yC_y DQW structures. direct c 1999 Elsevier Science B.V. All rights reserved.