Abstract: It was demonstrated by the simulation of laser beam annealing process that one can make a great local change in concentration of impurities or intrinsic defects in a Hg$- 1$MIN@x$/Cd$-x$/Te crystals by long (moreover only by such) pulses of laser radiation. The diffusion processes of defects in semiconductors in the presence of high power laser beam can be described using Schottky's thermodiffusion theory. The results of calculations of time- spatial distribution of the concentration of interstitial mercury for pulse lengths 8 ns, 100 ns, and 250 $mu@s are presented. These computer simulated results are compared with distribution of Hg concentration in specimens subjected to laser annealing under the same condition.!9
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机译：摘要：通过激光束退火过程的模拟表明，可以长期使Hg $ -1 $ MIN @ x $ / Cd $ -x $ / Te晶体中杂质或固有缺陷的浓度发生很大的局部变化（此外仅通过这种方式）激光辐射脉冲。可以使用肖特基热扩散理论描述在高功率激光束存在下半导体中缺陷的扩散过程。给出了脉冲长度为8 ns，100 ns和250μμs时间隙汞浓度的时空分布计算结果。将这些计算机模拟结果与在相同条件下进行激光退火的样品中的汞浓度分布进行比较！9
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