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Laser-induced ionization of solids: back to Keldysh

机译:激光诱导的固体电离:回到Keldysh

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The aim of our consideration is to clarify the influence of band structure of crystalline solids on ionization rate described in the framework of the Keldysh model. In this connection we compare the Keldysh formula with its analogs obtained for several models of band structure. We clearly demonstrate strong dependence of the ionization rate on band model especially in case of the transitional (from multiphoton to tunneling) and the tunneling regimes. An expression for the adiabatic parameter also depends on particular band model, and we present its new definition relating it to lattice constant, electric-field strength and laser frequency. We demonstrate possibility of a new regime of ionization referred to as collective ionization in which conditions for an effective jump of almost all valence electrons over the forbidden band within one period of field oscillations are provided. We present rigorous estimation of the threshold for that effect and show it to be close to 10 TW per square cm for most transparent materials. The influence of band model on multiphoton ionization rate depends on ratio of band gap to photon energy and is the weakest if the ration is slightly below an integer. In this connection we demonstrate that a proper choice of a band model can explain the well-known difference between calculated and measured values of ionization rate.
机译:我们考虑的目的是弄清晶体固体的能带结构对在Keldysh模型框架中描述的电离速率的影响。在这方面,我们将凯尔迪什公式与其从多个带结构模型中获得的类似物进行比较。我们清楚地证明了电离速率对能带模型的强烈依赖性,特别是在过渡态(从多光子到隧穿)和隧穿机制的情况下。绝热参数的表达式还取决于特定的能带模型,我们提出了与晶格常数,电场强度和激光频率相关的新定义。我们证明了一种称为集体电离的新电离机制的可能性,其中提供了在一个场振荡周期内几乎所有价电子在禁带上有效跃迁的条件。我们对这种效应的阈值进行了严格的估计,并表明对于大多数透明材料,其接近每平方厘米10 TW。带模型对多光子电离速率的影响取决于带隙与光子能量之比,如果比率稍低于整数,则影响最弱。在这方面,我们证明了能带模型的正确选择可以解释电离速率的计算值与测量值之间的众所周知的差异。

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