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Laser-induced ionization and intrinsic breakdown of wide band-gap solids

机译:激光诱导的电离和宽带隙固体的固有击穿

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摘要

A simple scaling of bulk laser-induced breakdown threshold for wide band-gap solids is derived on the basis of a recent modification of the Keldysh photo-ionization model [43, 46]. Contrary to most traditional models, the modification is based on rigorous energy dependence of reduced effective electron-hole mass. The dependence leads to a specific ionization regime with an extremely high ionization rate resulting in intensive generation of conduction-band electrons. The regime is characterized by a well-determined threshold intensity that is proposed to be associated with the threshold of bulk intrinsic laser-induced breakdown (LIB) by visible and near-infra-red laser radiation. That allows deriving dependence of LIB threshold on laser and material parameters. The presented model provides explanation for the experimental results on LIB thresholds that have not received theoretical interpretation. In particular, it reproduces empirical dependence of breakdown threshold on the average inter-atomic spacing derived from the experimental data. The LIB threshold evaluated from the presented model is very close to experimental data on bulk LIB by tightly focused beams in wide band-gap solids.
机译:基于对Keldysh光电离模型的最新修改,可以得出大体积激光诱导的宽带隙固体击穿阈值的简单标度[43,46]。与大多数传统模型相反,此修改基于降低的有效电子空穴质量的严格能量依赖性。这种依赖性导致具有极高电离速率的特定电离机制,从而导致大量生成导带电子。该方案的特征在于确定的阈值强度,该阈值强度建议与可见光和近红外激光辐射的整体本征激光诱发的击穿(LIB)阈值相关。这样就可以得出LIB阈值对激光和材料参数的依赖性。提出的模型为尚未获得理论解释的LIB阈值的实验结果提供了解释。特别是,它再现了击穿阈值对从实验数据得出的平均原子间间距的经验依赖性。通过在宽带隙固体中紧密聚焦的光束,从提出的模型评估的LIB阈值非常接近散装LIB的实验数据。

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