Heavy ion acceleration by 10TW Ti:sapphire laser system at PALS

摘要

Laser-driven heavy-ion accelerator represents a possible compact table-top device with a potential to applications, in particular, ion implantation of PN junctions in semiconductors. We present generation of heavy ion beams, Ti and Fe with an energy of 210 keV and 440 keV, respectively. Such beams were accelerated from a front size of thick foils by p-polarized 600mJ, 50fs laser pulse. Ion energies were measured by time-of-flight spectrometers. Shot-to-shot stability of obtained energies was better than 30%.