A Method of Handling Float Conductor Boundary Conditions in Plasma PIC Simulation

摘要

Dealing with float conductor boundary conditions involved in PIC simulation, this paper proposed a method to handle such boundary conditions. The method was applied to the simulation of discharge process in discharge cell fixed on metal object. The results show that the potential of float boundary conductor is between those of anode and cathode, and that the existence of float boundary conductor makes the plasma region collapse in areas near it.