首页> 外文会议>ISES solar world congress on solar energy for a sustainable future;ISES 2003 >SYNTHESIS OF COBALT OXIDE AND TIN OXIDE FILMS BY THE SOL GEL PROCESS:SURFACE AND OPTICAL PROPERTIES
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SYNTHESIS OF COBALT OXIDE AND TIN OXIDE FILMS BY THE SOL GEL PROCESS:SURFACE AND OPTICAL PROPERTIES

机译:溶胶凝胶法合成氧化钴和氧化锡薄膜的表面和光学性质

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Thin films of cobalt oxide and tin oxide were prepared by the dipping sol-gel method upon glass, SS and nickeled SS substrates. The aim is to build selective photothermal coatings for medium temperature applications by superimposing tin oxide films upon those of cobalt oxide. Spectral reflectance measurements in both the UV-Vis and the infrared ranges were used to characterize the relevant properties (absorptance and emittance). Also, atomic force microscopy and XPS measurements were made on the films. The XPS data tell us that several phases of cobalt oxide coexist (Co_3O_4, Co_2O_3) in the films under the preparation conditions used. Besides, large amounts of carbon were detected in several configurations: both as graphite particles and carbon bonded to metallic and oxygen atoms. Regarding the tin oxide films, both SnO and SnO_2 phases were detected besides carbon particles as in cobalt oxide. AFM studies made on samples upon glass substrates lead us to conclude that the dipping method yields surface morphologies with relatively low roughness, i.e., smooth film surfaces. By observing several tandem structures, it was found that placing a tin oxide coating upon a cobalt oxide film slightly improves the whole coating selectivity, but adding besides a nickel coating on the SS substrate, improves even more such selectivity value.
机译:通过浸涂溶胶-凝胶法在玻璃,不锈钢和镀镍不锈钢基板上制备氧化钴和氧化锡薄膜。目的是通过将氧化锡膜叠加在氧化钴膜上来构建用于中温应用的选择性光热涂层。在UV-Vis和红外范围内的光谱反射率测量用于表征相关特性(吸收率和发射率)。同样,在薄膜上进行原子力显微镜和XPS测量。 XPS数据告诉我们,在所用的制备条件下,薄膜中共存在氧化钴的几个相(Co_3O_4,Co_2O_3)。此外,还发现了多种形态的大量碳:既是石墨颗粒,又是结合在金属和氧原子上的碳。关于氧化锡膜,除了氧化钴中的碳颗粒之外,还检测到SnO和SnO_2相。在玻璃基板上的样品上进行的AFM研究使我们得出结论:浸渍法可产生粗糙度相对较低的表面形貌,即光滑的薄膜表面。通过观察几个串联结构,发现在氧化钴膜上放置氧化锡涂层可以稍微改善整个涂层的选择性,但是在SS基板上除了镍涂层之外,还可以进一步提高这样的选择性值。

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  • 会议地点 Goteborg(SE);Goteborg(SE)
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    Departamento de Ingeniería de Procesos e Hidráulica Universidad Autónoma Metropolitana– Iztapalapa Av. Rafael Atlixco No 186 Col. Vicentina México D.F. 09340 México pn. (55)8044645 fax (55)8044900 ebc@xanum.uam.mx;

    Instituto de Investigaciones en Materiales UNAM México D.F. 04510 México lazaro@zinalco.iimatercu.unam.mx;

    Sección de Electrónica del Estado Sólido Depto de Ingeniería Eléctrica CINVESTAV IPN Av. IPN No 2508 Apartado Postal 14-740 M{exico 07360 D.F. México.;

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