Growth and characterization of Ge nanocrystals

摘要

We have synthesized Ge nanocrystals of mean sizes 4,8, and 12 nm by ion-implanting Ge~+ ions into thermally grown SiO_2 films and subsequent annealing of the films at 830 deg C for 30 min in nitrogen. These films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. A distribution of particle size was identified by TEM in a 100 nm band below the surface. Particle sizes were estimated by these three techniques. direct c 1999 Elsevier Science B.V. All rights reserved.