Epitaxial Surface Growth with Local Interaction, Parallel and Non-parallel Simulations

摘要

Usually, theories of surface growth are based on the study of global processes without taking into account the local behaviour of atoms. In this work we present two simulations making use of a parallel computing library. These two simulations are based on a simple model that allows us to simulate the surface growing process of a certain material. The first one is a quasi-static model whereas the second recreates the atomic interaction considering the free atoms in continuous movement along the surface. Both simulations make use of local principles of ther-modynamic for atomic deposition, relaxation and diffusion of a growing surface. The obtained results agree with those that use global theories and with experimental results of Scanning Tunneling Microscopy (STM).