Surfactinated Rinse against Pattern Collapse and Defectivity in 193nm Lithography

摘要

Recently, the reduction of pattern collapse in 193nm resists with the help of a surfactinated rinse has been widely reported in the literature. This additional step was introduced between the DI rinse that follows the developer puddle, and the final dry spin step. The present work demonstrates that the latitude of 100nm, 90nm and 75nm dense line processes can be significantly extended with an appropriate surfactant rinse through pattern collapse reduction. Simultaneously, a considerable reduction of organic defectivity is reported on blanket resist wafers.