首页> 外文会议>International Symposium on Supercritical Fluids Tome 3: Materials Processing; 20030428-20030430; Versailles; FR >ABLATION AND SORPTIVE REMOVAL OF FILMS AND PARTICLES FROM SURFACES USING CARBON DIOXIDE
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ABLATION AND SORPTIVE REMOVAL OF FILMS AND PARTICLES FROM SURFACES USING CARBON DIOXIDE

机译:使用二氧化碳对表面上的薄膜和颗粒进行消融和吸附去除

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摘要

The use of carbon dioxide in its various states: supercritical (SC-CO_2), liquid (L-CO_2) or pellet form (snow-CO_2) for cleaning the surfaces of precision metallic/optical components and semiconductor electronic devices is well documented in the literature, but an understanding of the fundamental mechanisms responsible for carbon dioxide-based cleaning processes is lacking, Although carbon dioxide is an excellent solvent for removing non-polar contaminants from a variety of surfaces, other CO_2-based cleaning processes are based on mechanical or morphological-induced changes in the interfacial region. The extremely low surface tension of CO_2 is a favorable property in terms of its rapid and complete removal from the substrate after cleaning has been affected, while this characteristic of CO_2 also accounts for its negligible effect on the morphology of the substrate, as utilized in critical point drying. However, this is counter intuitive to what is achieved when using SC-CO_2 or L-CO_2 for surface cleaning or alteration. Mechanical ablation of particulates and other contaminants on surfaces with CO_2 is governed by a complex array of factors including van der Waals and electrostatic interactions, drag and lift forces, and phase changes that occur when the CO_2 molecule impacts on the surface. Ultimately particle removal from surfaces is dependent on the viscosity and density of SC-CO_2, two factors which impact on the hydrodynamics of the boundary layer at the fluid-surface interface. Theoretical calculations show that the boundary layer is a parabolic function of the CO_2 velocity, exhibiting only a weak dependence on temperature; and it is these factors which determine the size of the particle that can be removed with SC-CO_2. By contrast, CO_2-based cleaning of surface films exhibiting low or negligible solubility in SC-CO_2 requires a different mechanistic or theoretical treatment as well as experimental confirmation. Application of adhesion science principles using such parameters as Hamaker constants or two-dimensional solubility parameters (δ) can be used to qualitatively explain the ability of SC-CO_2 or snow-CO_2 to remove some surface films, For polymeric films, such as those that occur on semiconductor devices, there is a complex array of factors which can account for the observed effect of SC-CO_2 "cleaning". Interaction between the supercritical fluid and polymeric film can result in sorption of the fluid by the polymer, resulting in swelling or crystallization, SC-CO_2 can also alter the molecular weight distribution of the polymeric film via extraction of specific oligomers, induce depolymerization, or increase the molecular weight of the polymer by a pressure-induced polymerization reaction.
机译:二氧化碳在各种状态下的使用:超临界(SC-CO_2),液体(L-CO_2)或颗粒状(snow-CO_2)用于清洁精密金属/光学组件和半导体电子设备的表面文献中,但是对负责基于二氧化碳的清洁过程的基本机理缺乏理解,尽管二氧化碳是从多种表面去除非极性污染物的极佳溶剂,但其他基于CO_2的清洁过程却是基于机械或化学方法。形态引起的界面区域变化。就清洁后迅速从基材上彻底去除而言,CO_2极低的表面张力是一个有利的特性,而CO_2的这一特性也说明了其对基材形态的影响可忽略不计,点干燥。但是,这与使用SC-CO_2或L-CO_2进行表面清洁或更改时所获得的效果相反。用CO_2对表面上的微粒和其他污染物进行机械消融受一系列复杂因素的控制,这些因素包括范德华力和静电相互作用,拖曳力和升力以及当CO_2分子撞击表面时发生的相变。最终,从表面去除颗粒取决于SC-CO_2的粘度和密度,这是影响流体-表面界面处边界层流体力学的两个因素。理论计算表明,边界层是CO_2速度的抛物线函数,仅表现出对温度的弱依赖关系。这些因素决定了可通过SC-CO_2去除的颗粒尺寸。相比之下,基于CO_2的表面膜在SC-CO_2中溶解度低或可忽略不计的清洁需要不同的机理或理论处理以及实验确认。使用Hamaker常数或二维溶解度参数(δ)之类的粘附科学原理的应用可以定性地解释SC-CO_2或snow-CO_2去除某些表面膜的能力。对于聚合物膜,例如那些如果发生在半导体器件上,则存在一系列复杂的因素,这些因素可以解释观察到的SC-CO_2“清洁”效应。超临界流体与聚合物膜之间的相互作用可能导致聚合物吸收流体,导致溶胀或结晶,SC-CO_2还可以通过萃取特定的低聚物,诱导解聚或增加来改变聚合物膜的分子量分布。通过压力诱导的聚合反应得到聚合物的分子量。

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