首页> 外文会议>International Symposium on Plasma Chemistry; 20030622-27; Taormina(IT) >Controlled Growth of Carbon Nanotubes Using Pulsed Glow-Barrier Discharge
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Controlled Growth of Carbon Nanotubes Using Pulsed Glow-Barrier Discharge

机译:使用脉冲辉光势垒放电控制碳纳米管的生长

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This paper describes aligned growth of carbon nanotubes using pulsed glow barrier discharge at atmospheric pressure. In the first section we present general aspect of nanotubes deposited with He-based atmospheric pressure glow discharge (APG) generated by a 130-kHz sine voltage. The effect of substrate preparation (Ni/quartz or Ni/Si) and feed gas (CH_4 or C_2H_2) on nanotube morphology is discussed. Then pulsed APG, which would create directional electric field near substrate, is discussed for the improvement of aligned growth. Marginally aligned nanotubes were observed with positive pulsed voltage, while nanotubes became thicker and shorter in the case of negative pulsed voltage. We also found that high temperature ( > 750 ℃) and high pulse duty ( > 25%) is essential for better alignment in pulsed APG. Finally, we present concluding remarks along with future work for further improvement of APG-assisted chemical vapor deposition.
机译:本文介绍了在大气压力下使用脉冲辉光阻挡放电对碳纳米管的定向生长。在第一部分中,我们介绍了通过130 kHz正弦电压产生的He基大气压辉光放电(APG)沉积的纳米管的一般情况。讨论了底物制备(Ni /石英或Ni / Si)和进料气(CH_4或C_2H_2)对纳米管形态的影响。然后讨论了在基板附近产生定向电场的脉冲式APG,以改善取向生长。在正脉冲电压下观察到边缘排列的纳米管,而在负脉冲电压下纳米管变厚且变短。我们还发现,高温(> 750℃)和高脉冲占空比(> 25%)对于脉冲APG的更好对准至关重要。最后,我们提出总结性意见以及未来进一步改进APG辅助化学气相沉积的工作。

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