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High Temperature Synthesis of Si-based Nanomaterials from Silica Rich Oxide

机译:富硅氧化物高温合成硅基纳米材料

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摘要

Silicon based nanoparticulates were produced by smelting reduction method including a high temperature carbothermic reduction of silica-rich SiO_2-Al_2O_3-CaO melt to SiO and transfer of the SiO vapor with an Ar carrier-gas to cooler parts of experimental reactor where the vapor was condensed and deposited as nanostructures of different morphology. The obtained nanostructures were characterized with XRD, SEM, TEM and EDX/WDX. The amorphous SiOx nanoparticles of 30~50 nm in diameter were deposited at locations of lower temperatures, T < 920 K. The SiC nanowires were grown under high temperature conditions, T > 1320 K. The nanowires had diameter ranging from 20 to 60 nm and length up to several micrometers. The high temperature deposit included particles of crystalline Si with diameter ranged from 20 to few hundred nanometers. At the intermediate temperature range, nanoparticles formed chains and agglomerates containing all the above phases.
机译:通过熔体还原法生产硅基纳米颗粒,该方法包括将富含二氧化硅的SiO_2-Al_2O_3-CaO熔体高温碳热还原为SiO2并将SiO蒸气与Ar载气一起转移至实验反应器的较冷部分,在该部位冷凝并沉积为不同形态的纳米结构。用XRD,SEM,TEM和EDX / WDX对得到的纳米结构进行表征。在较低的温度T <920 K处沉积直径为30〜50 nm的无定形SiOx纳米颗粒。SiC纳米线在T> 1320 K的高温条件下生长。纳米线的直径范围为20至60 nm。长度可达几微米。高温沉积物包括直径为20至数百纳米的结晶硅颗粒。在中间温度范围内,纳米颗粒形成包含所有上述相的链和附聚物。

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