首页> 外文会议>International Symposium on Magnetic Materials, Processes, and Devices Ⅵ: Applications to Storage and Microelectromechanical Systems (MEMS) Oct 23-26, 2000, Phoenix, Arizona >FABRICATION OF HIGH-B_s SOFT MAGNETIC THIN FILMS BY AN ELECTRODEPOSITION TECHNIQUE FOR NEXT-GENERATION MAGNETIC RECORDING FIELD
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FABRICATION OF HIGH-B_s SOFT MAGNETIC THIN FILMS BY AN ELECTRODEPOSITION TECHNIQUE FOR NEXT-GENERATION MAGNETIC RECORDING FIELD

机译:下一代磁记录场的电沉积技术制备高B_s软磁薄膜

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On the basis of the high-B_s soft magnetic thin films of CoNiFe, developed by our research group, it was tried to increase the resistivity, ρ, with the addition of additives containing -NH_2 group. As a result, the small amount of C element co-deposited into CoNiFe thin films causes increases in ρ values. Moreover, the co-deposition of small amounts of Mo was successful in increasing the ρ value of CoNiFe thin films.
机译:在我们研究小组开发的高B_s CoNiFe软磁薄膜的基础上,尝试通过添加含-NH_2基团的添加剂来提高电阻率ρ。结果,少量共沉积到CoNiFe薄膜中的C元素导致ρ值增加。此外,少量Mo的共沉积成功地提高了CoNiFe薄膜的ρ值。

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