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ATOMIC FORCE MICROSCOPY STUDY OF PIT FORMATION DURING ANODIC ETCHING OF ALUMINUM

机译:铝阳极刻蚀过程中基坑形成的原子力显微镜研究

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摘要

Atomic Force Microscopy (AFM) was used to investigate the topographic characteristics of pitting sites during anodic galvanostatic etching of high-purity aluminum foils in hot baths containing HC1 and H_2SO_4. For as-received foils, surface pits nucleate only during the first 150 ms of etching at potentials as much as 3-4 V higher than the pitting potential. Pit sites near ridges are strongly preferred to an extent which depends on the purification process used in foil manufacture. Pit sites are more numerous and evenly distributed after pretreatment in NaOH, and can be activated at low potentials. In situ AFM observations of NaOH treated foils at room temperature in 1 M HC1 and 1 M H_2SO_4 show that a large number of dissolution sites are produced during NaOH immersion.
机译:原子力显微镜(AFM)用于研究在含有HC1和H_2SO_4的热浴中对高纯度铝箔进行阳极恒电流蚀刻过程中点蚀部位的形貌特征。对于接收到的箔,仅在蚀刻的前150毫秒内表面凹坑会以比凹坑电位高3-4 V的电势成核。强烈优选脊附近的坑点,其程度取决于箔制造中使用的纯化工艺。在NaOH中进行预处理后,坑点数量更多且分布均匀,并且可以在低电位下激活。室温下在1 M HC1和1 M H_2SO_4中对NaOH处理过的箔进行的原位AFM观察表明,在NaOH浸渍过程中会产生大量的溶解位点。

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