首页> 外文会议>International Symposium on Eco-Materials Processing amp; Design; 20060108-11; Chengdu(CN) >Comparison of Silicon Coatings Deposited by Vacuum Plasma Spraying (VPS) Atmospheric Plasma Spraying (APS)
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Comparison of Silicon Coatings Deposited by Vacuum Plasma Spraying (VPS) Atmospheric Plasma Spraying (APS)

机译:真空等离子喷涂(VPS)和大气等离子喷涂(APS)沉积的硅涂层的比较

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摘要

In this work, silicon coatings were deposited using VPS and APS technologies. Their structure and composition were characterized using XPS, SEM, and XRD. The porosity and surface-roughness of coatings were evaluated. The results showed that the VPS silicon coating possessed lower porosity compared with the APS silicon coating. The APS silicon coating surface was almost all covered by many small particles whose size is about 100 nm. The Si 2p XPS spectra indicated that silicon oxide existed in both coatings. The oxidation may have occurred during the plasma spray process. However, the VPS process could inhibit silicon from being oxidated.
机译:在这项工作中,使用VPS和APS技术沉积了硅涂层。使用XPS,SEM和XRD对它们的结构和组成进行了表征。评价了涂层的孔隙率和表面粗糙度。结果表明,与APS硅涂层相比,VPS硅涂层具有较低的孔隙率。 APS硅涂层表面几乎全部被许多大小约为100 nm的小颗粒覆盖。 Si 2p XPS光谱表明两个涂层中都存在氧化硅。在等离子喷涂过程中可能发生了氧化。但是,VPS工艺可能会抑制硅被氧化。

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