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EFFECT OF THIOUREA ON ELECTRODEPOSITION OF COPPER FROM ACID SULFATE SOLUTION

机译:硫脲对酸性硫酸溶液中铜电沉积的影响

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摘要

Copper was electrodeposited from sulfate bath onto copper substrate over silicon wafer with titanium adhesive film and the resistivity was measured using four point probe method. The measured resistivities increased with an increase in thiourea concentration from 10~(-6)M to 10~(-3)M as well as with an increase in the current density from 1 mA/cm~2 to 50 mA/cm~2. The deposition potentials shifted to more negative values with an increase in thiourea concentration and cathodic overpolarization was observed in presence of thiourea, indicating chemisorption of thiourea on cathodic sites. Scanning electron micrographs (SEM) show the presence of sulfur in the deposit when thiourea is present in the solution. The presence of thiourea in the deposit is suggestive of occurrence of the reaction H_2NCSNH_2 + 2H~+ + 2e→ NH_4CN + H_2S at electrolyte-electrode interface. This reaction can further lead to ultimate incorporation of sulfur based species in the deposit and resulting increase in resistivity of electrodeposited copper.
机译:将铜从硫酸盐浴中电沉积到具有钛粘合膜的硅晶片上的铜基板上,并使用四点探针法测量电阻率。随着硫脲浓度从10〜(-6)M增加到10〜(-3)M以及电流密度从1 mA / cm〜2增加到50 mA / cm〜2,测得的电阻率增加。随着硫脲浓度的增加,沉积电位移至更多的负值,并且在存在硫脲的情况下观察到阴极过极化,表明硫脲在阴极位点上的化学吸附。扫描电子显微照片(SEM)显示,当溶液中存在硫脲时,沉积物中会存在硫。沉积物中硫脲的存在提示电解质电极界面发生了H_2NCSNH_2 + 2H〜+ + 2e→NH_4CN + H_2S反应。该反应可进一步导致最终在沉积物中引入硫基物质,并导致电沉积铜的电阻率增加。

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