首页> 外文会议>International Symposium on Cluster and Nanostructure Interfaces, Oct 25-28, 1999, Richmond, Virginia, USA >SPIN UNRESTRICTED ELECTRONIC STRUCTURE CALCULATIONS OF 4d TRANSTION METAL DOPANTS IN InP
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SPIN UNRESTRICTED ELECTRONIC STRUCTURE CALCULATIONS OF 4d TRANSTION METAL DOPANTS IN InP

机译:InP中4d过渡金属掺杂的自旋束缚电子结构计算。

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We report a fully self-consistent spin unrestricted electronic structure calculation (DV Xα method) of the 4d transition metal elements substituted at the In site. The dopants (Y though Rh) are found to be donors with a charge distribution consistent with the Pauli electronegativity considerations. For Y, an empty level close to the conduction band edge is identified. The impurity d states have an overall general trend to move towards the valence band. The magnetic moments increase with atomic number and then decreases as expected by systematic filling of the 4d shell in the atomic configuration.
机译:我们报告了在In位置取代的4d过渡金属元素的完全自洽自旋无限制电子结构计算(DVXα方法)。发现掺杂剂(Y至Rh)是具有与泡利电负性考虑一致的电荷分布的施主。对于Y,识别出接近导带边缘的空电平。杂质d态总体上趋向价带。磁矩随着原子序数的增加而增加,然后如预期的那样通过原子填充4d壳的系统填充而减小。

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