PROTON IRRADIATION EFFECTS IN SILICON DEVICES

摘要

Proton irradiation effects in silicon devices are studied for components fabricated in various substrates in order to reveal possible hardening effects. The degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5×10~9 cm~(-2)2 to 5×10~(11) cm~(-2). The damage coefficients for both p- and n-type Czochralski, Float-Zone and epitaxial wafers are reported. Charge-Coupled Devices fabricated in a 1.2 μm CCD-CMOS technology are shown to be quite resistant to 59 MeV H~+ irradiations, irrespective of the substrate type.