首页> 外文会议>International Symposium on Advanced Ceramics; 20061211-15; Singapore(SG) >Densification and Thermal Conductivity of Y_2O_3-doped AlN Ceramics by Spark Plasma Sintering
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Densification and Thermal Conductivity of Y_2O_3-doped AlN Ceramics by Spark Plasma Sintering

机译:Y_2O_3掺杂AlN陶瓷的放电等离子体致密化和导热性能。

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摘要

AlN ceramics doped with yttrium oxide (Y_2O_3) as the sintering additive were prepared via the spark plasma sintering (SPS) technique. The sintering behaviors and densification mechanism were mainly investigated. The results showed that Y_2O_3 addition could promote the AlN densification. Y_2O_3-doped AlN samples could be densified at low temperatures of 1600-1700℃ in 20-25 minutes. The AlN samples were characterized with homogeneous microstrueture. The Y-Al-O compounds were created on the grain boundaries due to the reactions between Y_2O_3 and Al_2O_3 on AlN particle surface. With increasing the sintering temperature, AlN grains grew up, and the location of grain boundaries as well as the phase compositions changed. The Y/Al ratio in the aluminates increased, from Y_3Al_5O_(12) to YAlO_3 and to Y_4Al_2O_9. High-density, the growth of AlN grains and the homogenous dispersion of boundary phase were helpful to improve the thermal conductivity of AlN ceramics. The thermal conductivity of 122Wm~(-1)K~(-1) for the 4.0 mass%Y_2O_3-doped AlN sample was reached.
机译:通过火花等离子体烧结(SPS)技术制备了掺有氧化钇(Y_2O_3)作为烧结添加剂的AlN陶瓷。主要研究了烧结行为和致密化机理。结果表明,添加Y_2O_3可以促进AlN的致密化。掺Y_2O_3的AlN样品可以在16000-1700℃的低温下20-25分钟致密化。 AlN样品具有均匀的微观结构。由于Y_2O_3和Al_2O_3在AlN颗粒表面的反应,在晶界上形成了Y-Al-O化合物。随着烧结温度的升高,AlN晶粒长大,晶界的位置以及相组成也发生了变化。铝酸盐中的Y / Al比从Y_3Al_5O_(12)增加到YAlO_3和Y_4Al_2O_9增加。高密度,AlN晶粒的生长和界面相的均匀分散有助于提高AlN陶瓷的导热系数。掺杂4.0质量%Y_2O_3的AlN样品的导热系数达到122Wm〜(-1)K〜(-1)。

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