Cell Design Optimization and High Doped Slim Base Effects of the Power BJTs on Switching Characteristics and RBSOA Ruggedness

摘要

A new high speed switching bipolar power transistor having high-doped slim base process and optimized unit cell design in multi-base island type scheme are proposed and the effects of the high-doped slim base process with optimized unit cell design are verified through simulation and experiments. The proposed process with optimized cell design has enhanced not only RBSOA ruggedness from 18mJ to 30.4 mJ at the clamping voltage of 500V but also collector current capability from 15A to 19A using same active area. The new transistors having high doped and slim base with optimized cell design have also shown faster falling times by 53% with nearly null tail currents than the conventional transistors, which would result in much cooler operating temperature in the practical applications.