ITO Thin Films on Silicon Buffer by Sol Gel Method

摘要

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dip-coating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl_2.2H_2O and InCl_3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 x10~(-3) Ω.cm, Hall mobility of approximately 2 cm~2(Vs)~(-1) and free carrier concentration of approximately 4.2 x 10~(20) cm~(-3) are obtained for films 100 nm thick films. The Ⅰ-Ⅴ curve measurement showed typical Ⅰ-Ⅴ characteristic behavior of sol gel ITO thin films.