650V IGBT4: The optimized device for large current modules with 10 μs short-circuit withstand time

摘要

This paper presents the new Infineon 650V IGBT4. Designed especially for medium and large currentrnapplications Inom>300A, in comparison with the 600V IGBT3 the device offers a better softness duringrnswitch-off, and a higher blocking voltage capability. The measures used to realize these features werernto increase the chip thickness, to reduce the MOS channel width, and to enhance the back-side emitterrnefficiency. As a consequence, also the short-circuit robustness is significantly improved.