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Step by Step Turning Procedure for Optimizing ZVS Phase-shifted Full-bridge Converter

机译:优化ZVS相移全桥转换器的分步转换过程

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High power density and high efficiency become essential design needs of switching mode power supplies.Zero-voltage-switching (ZVS) phase-shift full-bridge converter can easily increase power density,but without providing extra switching losses at MOSFETs turning on to satisfy the design needs. This paper presents the fine turning procedures in step by step approach to optimize ZVS phase-shift fullbridge converter using Infineon latest technologies MOSFET with integrated fast body diode for achieving the highest efficiency.All the possible adjustments of the converter such as delay times of primary side MOSFETs,resonant inductance value,and variances of primary side MOSFET driving resistance,RG,ext will be explained in detail.Since ZVS phase-shift full-bridge converter is already maturated, the mathematical calculation for design equations will be omitted for briefly in this paper.However, the main focus on this paper is putting on waveforms analyses by “real measurement” to illustrate each effect of fine turning steps.Finally a turning procedure of ZVS phase-shift full-bridge converter flowchart will be showed.
机译:高功率密度和高效率成为开关模式电源的基本设计需求。零电压开关(ZVS)相移全桥转换器可以轻松提高功率密度,但不会在MOSFET导通时提供额外的开关损耗来满足设计需求。本文将逐步介绍微调程序,以采用英飞凌最新技术的MOSFET和集成快速体二极管来优化ZVS相移全桥转换器,以实现最高效率。所有可能的转换器调整,例如初级侧的延迟时间将详细说明MOSFET,谐振电感值以及初级侧MOSFET驱动电阻的变化RG.ext。由于ZVS相移全桥转换器已经成熟,因此在此将省略设计方程的数学计算但是,本文的主要重点是通过“实际测量”进行波形分析,以说明微调步骤的各个效果。最后,将显示ZVS相移全桥转换器的流程图。

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