Fully Wet Cu Gate Metallization Process for a-Si:H TFT Device

摘要

Copper gate metallization to amorphous silicon thin film transistor has been made by wet deposition processes without vacuum processes. In order to improve the adhesion of metal film to glass and achieve single surface deposition, a mixture of catalyst and organic polymer comprises acrylic-copolymer was introduced as an adhesive layer between metal and glass. Electroless plating Ni with electroplating Cu films have been demonstrated as gate electrode on G2 size (370 mm × 470 mm) glass. Good transfer characteristics of Cu/Ni gate structure of TFTs were obtained.