Advanced Barrierless Copper Metallization for TFT-LCD Applications

摘要

This article reports copper metallization in the barrierless scheme. We propose that doping trace amounts of insoluble substances (W or WN) into Cu seed layers can effectively inhibit the detrimental interaction with the barrier-free Si. Our results highlight the possibility of using these layers in the advanced barrierless metallization for TFT-LCD applications.