首页> 外文会议>International Conference on Solidification and Gravity; 20040906-09; Miskolc-Lillafured(HU) >Microstructures Observed During Directional Solidification Along The Univariant Eutectic Reaction In A Ternary Al-Cu-Si Alloy
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Microstructures Observed During Directional Solidification Along The Univariant Eutectic Reaction In A Ternary Al-Cu-Si Alloy

机译:三元Al-Cu-Si合金单向共晶定向凝固过程中观察到的显微组织

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摘要

Within the frame of the ESA research program SETA, "Solidification along a Eutectic Path in Ternary Alloys", experiments have been performed focussing on several distinct subtopics. One of these subtopics is to study coupled growth along the univariant eutectic reaction: L → α + β. In this paper, the influence of the growth velocity v on the morphology of the solid/liquid interface is evaluated in a ternary Al-Cu-Si alloy with a composition close to the univariant eutectic groove L → α(Al) + θ-Al_2Cu. Different structural regions can be identified in terms of the stability of the solid-liquid interface (morphological stability) and the stability of the coupling (competitive growth) during unidirectional solidification as function of the solidification parameters. It is found that two-phase planar growth with a lamellar arrangement can be obtained at a sufficiently low growth rate v. The measured interlamellar spacing follows the Jackson and Hunt relationship λ~2v = constant. At a higher growth velocity first a destabilisation of the solid/liquid interface is observed and finally competitive growth is observed revealing primary θ-Al_2Cu growing ahead of the eutectic interface. It is assumed that the cellular break-up is a two-step process related to the crystallography of the system. Fitting the different morphologies into one microstructure map, an extension of the coupled zone concept as has been proposed for binary alloys is necessary.
机译:在ESA研究计划SETA“三元合金中沿共晶路径的固溶化”的框架内,针对几个不同的子主题进行了实验。这些子主题之一是研究沿单变量共晶反应的耦合生长:L→α+β。本文研究了三元Al-Cu-Si合金中单相共晶槽L→α(Al)+θ-Al_2Cu接近时生长速度v对固/液界面形态的影响。 。可以根据固-液界面的稳定性(形态稳定性)和在单向凝固过程中耦合的稳定性(竞争性生长)作为凝固参数的函数来识别不同的结构区域。已经发现,可以以足够低的生长速率v获得具有层状排列的两相平面生长。测量的层间间距遵循Jackson和Hunt关系λ〜2v =常数。在较高的生长速度下,首先观察到固/液界面的失稳,最后观察到竞争性生长,揭示出原始的θ-Al_2Cu在共晶界面之前生长。假定细胞分裂是与系统的晶体学有关的两步过程。将不同的形态拟合到一个微结构图中,对二元合金提出的耦合区概念的扩展是必要的。

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