STUDY ON RESISTIVITY STABILITY OF NTDFZSi AT HIGH TEMPERATURE

机译：NTDFZSi的高温电阻率稳定性研究

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The resistivity stability of FZSi at high temperature has been studied by the method of isothermal annealing,X- ray transmission topography spread resistance(SR), etc. The effect of microdefects on the resistivity stability at high temperature was studied primarily.

机译：通过等温退火，X射线透射形貌扩展电阻（SR）等方法研究了FZSi在高温下的电阻稳定性。主要研究了微缺陷对高温下电阻率稳定性的影响。

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来源
《International conference on solid-state and integrated-circuit technology; 19951024-28; Beijing(CN)》|1995年|P.160|共1页
会议地点 Beijing(CN)
作者
Yangxian Li; Yulin Ju; Junzhong Cao; Hongmei Wang; Desheng Cui;
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作者单位

Material Research Center,Hebei Institute of Technology, Tianjin 300130, China;

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原文格式 PDF
正文语种 eng
中图分类半导体集成电路（固体电路）;
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STUDY ON RESISTIVITY STABILITY OF NTDFZSi AT HIGH TEMPERATURE

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