A THERMAL FTELD OXIDATION PROCESS FOR IONIZING RADIATION HARDNESS

机译：电离辐射硬度的热催化氧化过程

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摘要

A thermal field oxidation process for ionizing radiation hardness has been described. It is shown that the failure threshold of 54HC04, in which the hardened thermal field process has been applied, is excess to 1 × 10~6rad(Si).

机译：已经描述了用于使辐射硬度电离的热场氧化工艺。结果表明，采用强化热场过程的54HC04的破坏阈值超过1×10〜6rad（Si）。

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来源
《International conference on solid-state and integrated-circuit technology; 19951024-28; Beijing(CN)》|1995年|P.189|共1页
会议地点 Beijing(CN)
作者
YUANFU ZHAO; YUHONG HU; RONGLIANG YAN; GUOQIANG ZHANG; DIYUAN REN;
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作者单位

Xi'an Microelectronics Research Institute, Box 19, Lintong, Shaanxi,China, 710600;

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原文格式 PDF
正文语种 eng
中图分类半导体集成电路（固体电路）;
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专利

1. A systematic study of the initial electrical and radiation hardness properties of reoxidized nitrided oxides by rapid thermal processing [J] . Wei-Shin Lu, Ching-Hsu Chan IEEE Transactions on Nuclear Science . 1995,第3期

机译：通过快速热处理对再氧化的氮化氧化物的初始电和辐射硬度特性进行系统研究
2. Process dependency of radiation hardness of rapid thermal reoxidized nitrided gate oxides [J] . Lu W.-S., Lin K.-C. IEEE Transactions on Electron Devices . 1993,第9期

机译：快速热重氧化氮化栅氧化物的辐射硬度与工艺的关系
3. Improved radiation hardness of MOS devices with ultrathin nitrided oxide gate dielectrics prepared by rapid thermal processing [J] . Lo G.Q., Shih D.K. Electronics Letters . 1989,第13期

机译：通过快速热处理制备的具有超薄氮化氧化物栅极电介质的MOS器件的辐射硬度得到改善
4. A thermal field oxidation process for ionizing radiation hardness [C] . Yuanfu Zhao, Yuhong Hu . 1995

机译：电离辐射硬度的热场氧化工艺
5. INVERSION LAYER SOLAR CELLS USING IONIZING RADIATION-INDUCED SURFACE INVERSION IN INDIUM OXIDE/SILICON DIOXIDE/SILICON STRUCTURES (RADIATION HARD). [D] . OKUYAMA, YOSHIKAZU. 1985

机译：使用电离辐射诱导的氧化铟/氧化硅/二氧化硅/硅结构（辐射硬）中的表面倒置的层状太阳能电池。
6. Assessment of function histopathological changes and oxidative stress in liver tissue due to ionizing and non-ionizing radiations [O] . Sajad Borzoueisileh, Ali Shabestani Monfared, Hossein Ghorbani, 2020

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8. Development of the Field-Induced Electron Injection and Impact Ionization (F4I) Technique for Radiation Hardness Testing of MOS (Metal-Oxide-Semiconductor) Gate Insulators [R] . Boesch, H. E. 1988

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A THERMAL FTELD OXIDATION PROCESS FOR IONIZING RADIATION HARDNESS

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