INVESTIGATION ON LOW VOLTAGE NANOMETER SEALED VACUUM MICROELECTRON DIODE ARRAYS

机译：低压纳米密封真空微电子二极管阵列的研究

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摘要

This paper has investigated the structure of low-voltage nanometer sealed vacuum micro-electron diode arrays and their fabrication technologies, obtained emission current of 100 mA at 4.2v, equivalent to 3.7 μ A/ tip.Their emission characteristics are analyzed and discussed.

机译：本文研究了低压纳米密封真空微电子二极管阵列的结构及其制造技术，在4.2v时获得100mA的发射电流，等效于3.7μA/尖端，并对其发射特性进行了分析和讨论。

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来源
《International conference on solid-state and integrated-circuit technology; 19951024-28; Beijing(CN)》|1995年|P.134|共1页
会议地点 Beijing(CN)
作者
XU QIUXIA; LI WEINING; WANG SUOFA; CAI SHUMIN; ZHAO YUYIN; LI LIHUA;
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作者单位

Microelectronics Center,Chinese Academy of Sciences, Beijing P.O.Box 9819,100029, China;

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原文格式 PDF
正文语种 eng
中图分类半导体集成电路（固体电路）;
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4. Investigation on low voltage nanometer sealed vacuum microelectron diode arrays [C] . Xu Qiuxia, Li Weining . 1995

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INVESTIGATION ON LOW VOLTAGE NANOMETER SEALED VACUUM MICROELECTRON DIODE ARRAYS

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