Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces

摘要

Step structures have been reproducibly achieved after chemico-mechanical polishing (CMP) of 6H and 15R-SiC surfaces. The formation of single bilayer steps on the Si-face of wafer is reported for the first time. A measure of c-axis misorientation has been deduced from the step width and the influence of the crystal quality has been shown.