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Precise temperature control using reverse seebeck effect

机译:使用反向塞贝克效应进行精确的温度控制

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It is an innovative concept, in which semiconductor element is used for thermal considerations. Thermoelectric material such as Bismuth and Tellurium is used to made semiconductor elements. This process is carried on the principle of reverse process of Seebeck effect. In this paper, the wall is constructed of using two semiconductor metal junctions. This wall automatically adopted with atmosphere based on the signal from temperature sensor. Thermal consideration process is achieved by reversing the current direction of power source. In versatile wall, a high power DC source is used to supply the power. In this paper the temperature range is maintained between 18°C to 45°C. This temperature control system consists of mode selection button, microcontroller, Optocoupler with relay, high amps DC source and Semiconductor element wall. By pressing mode button we can choose the required mode and that information is taken to microcontroller through port 1. The 12 V relay is connected in port 2 through Optocoupler in order to provide isolation between control and power side. There are two more relays we can change the current direction to bimetal semiconductor elements. For forward direction of current flow heating process is carried on. In same way cooling process is also carried on by changing the current in reverse direction. The bimetal semiconductors get power from external high amps powersource.
机译:这是一个创新的概念,其中出于散热考虑使用半导体元件。诸如铋和碲的热电材料用于制造半导体元件。该过程是根据塞贝克效应的逆过程原理进行的。在本文中,墙体是使用两个半导体金属结构成的。该墙根据温度传感器的信号自动适应大气。通过考虑电源的电流方向来实现热考虑过程。在多功能墙壁中,使用大功率直流电源来提供电源。在本文中,温度范围保持在18°C至45°C之间。该温度控制系统包括模式选择按钮,微控制器,带继电器的光耦合器,高安培DC源和半导体元件壁。通过按下模式按钮,我们可以选择所需的模式,并将信息通过端口1传送到微控制器。12 V继电器通过光耦合器连接在端口2中,以便在控制端和电源端之间提供隔离。还有两个继电器,我们可以将电流方向更改为双金属半导体元件。对于电流的正向进行加热过程。同样,通过反向改变电流也可以进行冷却过程。双金属半导体从外部高安培电源获得功率。

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