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Analytical investigation on polishing pressure distribution by utilizing three-dimensional process simulation

机译:利用三维过程仿真对抛光压力分布进行分析研究

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This paper presents analytical investigation on polishing pressure distribution in Chemical Mechanical Polishing (CMP) process. In general, the polishing pressure is distributed unevenly around a wafer edge. This uneven distribution is essentially due to discontinuous contact of a wafer against a polishing pad. An edge profile of the wafer and nonlinear viscoelastic properties of the polishing pad affect the polishing pressure distribution significantly. The compression by a retainer ring against the polishing pad also has an indirect effect on the polishing pressure distribution. These phenomena are empirically known in industry. In order to quantify the influence of these factors, a series of analytical investigations on the polishing pressure distribution are conducted in the present study. The simulator developed by authors is utilized. Arbitrary Lagrangian-Eulerian (ALE) Finite Element Method (FEM) is employed in dynamic nonlinear analysis. In a series of process simulations, material properties, i.e., Young's modulus, Poisson's ratio and proportional damping factor, of the polishing pad and geometries of the wafer and the retainer ring are changed, respectively. The calculated results indicated that the polishing pressure distribution around the wafer edge varies considerably depending on the parameters.
机译:本文介绍了化学机械抛光(CMP)过程中抛光压力分布的分析研究。通常,抛光压力在晶片边缘周围不均匀地分布。这种不均匀分布主要是由于晶片与抛光垫的不连续接触造成的。晶片的边缘轮廓和抛光垫的非线性粘弹性能显着影响抛光压力分布。固定环对抛光垫的压缩也对抛光压力分布有间接影响。这些现象在工业上是经验已知的。为了量化这些因素的影响,在本研究中对抛光压力分布进行了一系列分析研究。利用作者开发的模拟器。动态非线性分析采用任意拉格朗日-欧拉(ALE)有限元方法(FEM)。在一系列的过程模拟中,分别改变抛光垫的材料特性,即杨氏模量,泊松比和比例阻尼因数,以及晶片和保持环的几何形状。计算结果表明,晶片边缘周围的抛光压力分布随参数而变化很大。

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