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Projection photolithography modeling using the finite-difference time- domain approach

机译:使用时域有限差分法的投影光刻建模

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The photolithographic finite-difference time-domain (PFDTD) approach to the modeling of 3D electromagnetic fields and photolithographic structures for projection photolithography in sub-0.2μm and nanometer ranges is developed. It is based on adaptation and application of advanced methods of the Maxwell equations' solution to photolithography problems. The appropriate computational methods and modeling algorithms are created and applied to specific problems. It is shown that sometimes the PFDTD-approach could be preferred over the routine the rigorous coupled-waves analysis (RCWA), especially for the relatively small critical dimensions and in short wavelength range. It allowed us to extent the application domain of our own photolithography software package, and to improve quality and accuracy of topical projection schemes' simulation.
机译:开发了一种用于3D电磁场和光刻结构建模的光刻有限差分时域(PFDTD)方法,用于在0.2μm和纳米范围内的投影光刻。它基于麦克斯韦方程组解决光刻问题的高级方法的改编和应用。创建了适当的计算方法和建模算法,并将其应用于特定问题。结果表明,有时PFDTD方法比常规的严格耦合波分析(RCWA)更为可取,特别是对于相对较小的临界尺寸和较短的波长范围而言。它使我们能够扩展自己的光刻软件包的应用领域,并提高局部投影方案模拟的质量和准确性。

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