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Femtosecond laser-induced periodic surface structures: recent approaches to explain their sub-wavelength periodicities

机译:飞秒激光诱导的周期性表面结构:解释其亚波长周期性的最新方法

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The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of semiconductors and dielectrics by linearly polarized high-intensity Ti:sapphire fs-laser pulses (τ ~100 fs, λ ~800 nm) is studied experimentally and theoretically. In the experiments, two different types of LIPSS exhibiting very different spatial periods arc observed (so-called LSFL - low spatial frequency LIPSS, and HSFL - high spatial frequency LIPSS), both having a different dependence on the incident laser fluence and pulse number per spot. The experimental results are analyzed by means of a new theoretical approach, which combines the generally accepted LIPSS theory of J. E. Sipe and co-workers [Phys. Rev. B 27, 1141-1154 (1983)] with a Drude model, in order to account for transient changes of the optical properties of the irradiated materials. The joint Sipe-Drude model is capable of explaining numerous aspects of fs-LIPSS formation, i.e., the orientation of the LIPSS, their fluence dependence as well as their spatial periods. The latter aspect is specifically demonstrated for silicon crystals, which show experimental LSFL periods A somewhat smaller than X. This behaviour is caused by the excitation of surface plasmon polaritons, SPP, (once the initially semiconducting material turns to a metallic state upon formation of a dense free-electron-plasma in the material) and the subsequent interference between its electrical fields with that of the incident laser beam, resulting in a spatially modulated energy deposition at the surface. Upon multi-pulse irradiation, a feedback mechanism, caused by the redshift of the resonance in a grating-assisted SPP excitation, is further reducing the LSFL spatial periods. The SPP-based mechanism of LSFL successfully explains the remarkably large range of LSFL periods between ~0.6 λ and λ.
机译:通过理论和实验研究了通过线性极化的高强度Ti:蓝宝石fs-激光脉冲(τ〜100 fs,λ〜800 nm)照射半导体和电介质时形成激光诱导的周期性表面结构(LIPSS)。在实验中,观察到两种表现出非常不同的空间周期的LIPSS(所谓的LSFL-低空间频率LIPSS和HSFL-高空间频率LIPSS),它们对入射激光通量和脉冲数的依赖性不同。点。实验结果是通过一种新的理论方法进行分析的,该方法结合了J. E. Sipe和他的同事们普遍接受的LIPSS理论[Phys。 Rev. B 27,1141-1154(1983)],采用Drude模型,以说明被辐照材料的光学特性的瞬态变化。联合Sipe-Drude模型能够解释fs-LIPSS形成的许多方面,即LIPSS的方向,其注量依赖性以及它们的空间周期。后一个方面已针对硅晶体进行了专门演示,该晶体的实验LSFL周期A略小于X。这种现象是由表面等离激元极化子SPP的激发引起的(一旦最初的半导体材料在形成a时变成金属态材料中的密集自由电子等离子体)及其随后的电场与入射激光束之间的干扰,从而导致在表面进行空间调制的能量沉积。在多脉冲辐照下,由光栅辅助SPP激发中的共振红移引起的反馈机制正在进一步减小LSFL空间周期。基于SPP的LSFL机制成功地解释了〜0.6λ和λ之间的LSFL周期范围非常大。

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