Fermi level dependence of Moessbauer spectroscopic components corresponding to iron interstitials and their clusters in silicon

摘要

~(57)Fe deposited p- and n-type float-zone Si are studied by high temperature Mossbauer spectroscopy. After the deposition the spectra obtained at room temperature indicate that ~(57)Fe atoms are migrating already, and forming the components due to interstitial, substitutional Fe and other clusters in Si. A measurement, i.e., simultaneously an annealing at 1273 K for about 10 days leads further to the diffusion of ~(57)Fe atoms into a deeper part of the matrix. The spectra depend not only on the dopants and their concentrations, but also on temperature. This Fermi level dependence will provide us information on the charge states of each Fe component in Si matrix, and therefore their energy levels.